roithner lasertechnik roithner lasertechnik a-1040 wien, fleischmanngasse 9 tel: +43 -1- 586 52 43 fax: +43 -1- 586 41 43 e-mail: office@roithner-laser.com http://www.roithner-laser.com RLT8320MG technical data high power infrared laserdiode structure: algaas double heterostructure lasing wavelength: 830 nm typ. max. optical power: 20 mw package: 5.6 mm pin connection: 1) laserdiode cathode 2) laserdiode anode and photodiode cathode 3) photodiode anode maximum ratings (tc=25c) characteristic symbol rating unit optical output power p o 20 mw ld reverse voltage v r(ld) 2 v pd reverse voltage v r(pd) 30 v operating temperature t op -10 .. +50 c storage temperature t stg -40 .. +85 c optical-electrical characteristics (tc = 25c) characteristic symbol test condition min typ max unit threshold current i th cw 35 45 ma operation current i op p o = 20 mw 45 60 80 ma operation voltage v op p o = 20 mw 2.0 2.3 2.6 v lasing wavelength l p p o = 20 mw 820 830 840 nm beam divergence q // p o = 20 mw 8 10 11 beam divergence q ^ p o = 20 mw 25 31 40 astigmatism a s p o = 20 mw 11 m monitor current i m p o = 20 mw, v r =5v 150 250 350 a note! laserdiode must be cooled!
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